We characterize the surface passivation properties of ultrathin titanium oxide (TiOx) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different ...

We examine two different silicon solar cell designs featuring full-area electron-selective contacts based on ultrathin (2-3 nm) titanium oxide (TiOx) films deposited by atomic layer deposition. The first cell design applies ...

Kerfless epitaxial silicon from the porous silicon (PSI) process is a promising alternative for standard wafers. They allow the reduction of PV costs by combining high material quality at reduced production costs. We ...

The application of local aluminum (Al)-alloyed contacts to the p-type base of silicon solar cells reduces minority charge carrier recombination due to the formation of a local back surface field (LBSF). We study the ...

We analyze the lifetime evolution during permanent deactivation of the boron-oxygen-related defect center (BO defect) in boron-doped, oxygen-rich Czochralski-grown silicon (Cz-Si). In particular, we examine the impact of ...

In this contribution, we focus on improving the fundamental understanding of the carrier lifetime degradation and regeneration observed in block-cast multicrystalline silicon (mc-Si) wafers under illumination at elevated ...